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Computing Memory

128Mb | HY5DU28422BT

  • Computing Memory
  • Consumer Memory
  • Graphics Memory
  • Mobile Memory
  • NAND Flash
DDR3 SDRAM :[Com.][Mod.] DDR2 SDRAM :[Com.][Mod.] DDR SDRAM :[Com.][Mod.]
DDR2 SDRAM | DDR SDRAM | SDR SDRAM : [Com.] [Mod.]

Technical Data Sheet

Part Number Rev. Updated Date Remark
HY5DU28422BT 0.3 2004-04-07  

Simulation Model

Part Number Rev. Updated Date Remark
IBIS 0.0 2004-04-28  
Verilog 0.0 2004-04-28  
VHDL 0.0 2004-04-28  

Description

The Hynix HY5DU28422B(L)Tis a 134,217,728-bit CMOS Double Data Rate(DDR) Synchro-nous DRAM, ideally suited for the main memory applications which requires large memory density and high band-width. The Hynix 128Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock.
While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it.
The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth.
All input and output voltage levels are compatible with SSTL_2.

Features

    • IBIVDD, VDDQ = 2.5V +/- 0.2V
    • All inputs and outputs are compatible with SSTL_2 interface
    • Fully differential clock inputs (CK, /CK) operation
    • Double data rate interface
    • Source synchronous - data transaction aligned to bidirectional data strobe (DQS)
    • Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ)
    • On chip DLL align DQ and DQS transition with CK transition
    • DM mask write data-in at the both rising and falling edges of the data strobe
    • tRAS Lock-out function supported
    • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
    • Programmable /CAS latency 2 and 2.5 supported
    • Programmable burst length 2 / 4 / 8 with both sequential and interleave mode
    • Internal four bank operations with single pulsed /RAS
    • Auto refresh and self refresh supported
    • 4096 refresh cycles / 64ms
    • JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch
    • Full and Half strength driver option controlled by EMRS

Ordering Information

Part No.

CL2

CL2.5

Remark

(CL-tRCD-tRP)

Package

HY5DU28422BT-J

133MHz

166MHz

DDR333 (2.5-3-3)

400mil

66pin

TSOP-II

HY5DU28422BT-M

133MHz

133MHz

DDR266 (2-2-2)

HY5DU28422BT-K

133MHz

133MHz

DDR266A (2-3-3)

HY5DU28422BT-H

100MHz

133MHz

DDR266B (2.5-3-3)

HY5DU28422BT-L

100MHz

125MHz

DDR200 (2-2-2)

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