1Mb | HY628100B

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Technical Data Sheet

Part Number	Rev.	Updated Date	Remark
HY628100B	12	2004-04-26

Description

The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bits.
The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology.
It is particularly well suited for used in high density low power system application.
This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V.

< PIN DESCRIPTION >

Pin Name	Pin Function	Pin Name	Pin Function
/CS1	Chip Select 1	CS2	Chip Select 2
/WE	Write Enable	/OE	Output Enable
A0~A16	Address Input	IO1~IO8	Lower Data Input/Output
Vdd	Power(4.5V~5.5V)	Vss	Ground

Features

• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Batterybackup(L/LL-part)
  • 2.0V(min) data retention
• Standard pin configuration
  • 32pin 525mil SOP
  • 32pin 8x20mm2 TSOP-I (Standard)

Ordering Information

Part Number	Voltage (V)	Speed (ns)	Operation Current/Icc (mA)	Standby Current(uA)		Temp.(oc)
				L	LL
HY628100B	4.5~5.5	50/55/77/85	10	100	20	0~70
HY628100B-E	4.5~5.5	50/55/77/85	10	100	30	-25~85
HY628100B-I	4.5~5.5	50/55/77/85	10	100	30	-40~85