4Mb | HY628400A

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Technical Data Sheet

Part Number	Rev.	Updated Date	Remark
HY628400A	0.7	2004-04-26

Description

The HY628400A is a high speed, low power and 4M bit CMOS SRAM organized as 512K words by 8bits.
The HY628400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology.
It is particularly well suited for use in high-density and low power system applications.
This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0V.

< PIN DESCRIPTION >

Pin Name	Pin Function	Pin Name	Pin Function
/CS	Chip Select	/OE	Output Enable
/WE	Write Enable	IO1~IO8	Data Input/Output
A0~A18	Address Input	Vss	Ground
Vdd	Power(4.5~5.5V)

Features

• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Batterybackup (L/LL-part)
  • 2.0V(min) data retention
• Standard pin configuration
  • 32pin 525mil SOP
  • 32pin 400mil TSOP-II (Standard and Reversed)

Ordering Information

Part Number	Voltage (V)	Speed (ns)	Operation Current/Icc (mA)	Standby Current(uA)		Temp.(oc)
				L	LL
HY628400A	4.5~5.5	55/70/85	10	100	30	0~70
HY628400A-E	4.5~5.5	55/70/85	10	100	50	-25~85
HY628400A-I	4.5~5.5	55/70/85	10	100	50	-40~85