256Kb | HY62WT08081E

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Technical Data Sheet

Part Number	Rev.	Updated Date	Remark
HY62WT08081E	0.4	2004-04-26

Description

The HY62WT08081E is a high speed, low power and 256K bit CMOS Static Random Access Memory organized as 32,786 words by 8bits.
The HY62WT08081E uses high performance CMOS process technology and designed for high speed low power circuit technology.
It is particularly well suited for used in high density low power system application.
This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V.

< PIN DESCRIPTION >

Pin Name	Pin Function	Pin Name	Pin Function
/CS	Chip Select	/OE	Output Enable
/WE	Write Enable	IO1~IO8	Data Input/Output
A0~A14	Address Input	Vss	Ground
Vdd	Power

Features

• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Batterybackup(L/LL-part)
  • 2.0V(min) data retention
• Standard pin configuration
  • 28pin 600mil PDIP
  • 28pin 330mil SOP
  • 28pin 8x13.4mm2 TSOP-I (Standard)

Ordering Information

Part Number	Voltage (V)	Speed (ns)	Operation Current/Icc (mA)	Standby Current(uA)		Temp.(oc)
				L	LL
HY62WT08081E-C	2.7~5.5	55/70/85	2/10		5/10	0~70
HY62WT08081E-E	2.7~5.5	55/70/85	2/10		8/20	-25~85
HY62WT08081E-I	2.7~5.5	55/70/85	2/10		8/20	-40~85