Hynix

Unbuffered DIMM 512MB | HYMD564646CP8J

DDR3 SDRAM :[Com.][Mod.] DDR2 SDRAM :[Com.][Mod.] DDR SDRAM :[Com.][Mod.]

DDR2 SDRAM | DDR SDRAM | SDR SDRAM : [Com.] [Mod.]

GDDR SDRAM | DDR2 SDRAM | GDDR3 SDRAM | GDDR4 SDRAM

Mobile SDR | Mobile DDR | PSRAM | Super Low Power SRAM | Low Power Slow SRAM

Technical Data Sheet

Part Number	Rev.	Updated Date	Remark
HYMD564646CP8J	1.3	2006-02-13	Lead free

Serial Presence Detect

Part Number	Rev.	Updated Date	Remark
HYMD564646CP8J_SPD	0.0	2005-07-12

Description

This Hynix unbuffered Dual In-Line Memory Module(DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 184pin glass-epoxy substrate.
This Hynix 512Mb C ver. based unbuffered DIMM series providea high performance 8 byte interface in 5.25" width form factor of industry standard.
It is suitable for easy interchangeand addition.

Features

JEDEC Standard 184-pin dual in-line memory module (DIMM)
Two ranks 128M x 72, 128M x 64 and One rank 64M x 72, 64M x 64, 32M x 64 organization
2.6V±0.1V VDD and VDDQ Power supply for DDR400,
2.5V±0.2V for DDR333 and below
All inputs and outputs are compatible with SSTL_2 interface
Fully differential clock operations (CK & /CK) with 133/166/200MHz
DLL aligns DQ and DQS transition with CK transition
Programmable CAS Latency: DDR266(2, 2.5 clock), DDR333(2.5 clock), DDR400(3 clock)
Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode
Edge-aligned DQS with data outs and Center-aligned DQS with data inputs
Auto refresh and self refresh supported
8192 refresh cycles / 64ms
Serial Presence Detect (SPD) with EEPROM
Built with 512Mb DDR SDRAMs in 400 mil TSOP II packages
All lead-free products (RoHS compliant)

Ordering Information