Hynix

Unbuffered DIMM 1GB | HYMP512U648

DDR3 SDRAM :[Com.][Mod.] DDR2 SDRAM :[Com.][Mod.] DDR SDRAM :[Com.][Mod.]

DDR2 SDRAM | DDR SDRAM | SDR SDRAM : [Com.] [Mod.]

GDDR SDRAM | DDR2 SDRAM | GDDR3 SDRAM | GDDR4 SDRAM

Mobile SDR | Mobile DDR | PSRAM | Super Low Power SRAM | Low Power Slow SRAM

Technical Data Sheet

Part Number	Rev.	Updated Date	Remark
HYMP512U648	1.0	2005-04-19

Serial Presence Detect

Part Number	Rev.	Updated Date	Remark
HYMP512U648_SPD	1.2	2005-02-21	Since 2005

Description

This Hynix unbuffered Dual In-Line Memory Module(DIMM) series consists of 512Mb 1st ver. DDR2 SDRAMs in FineBall Grid Array(FBGA) packages on a 240pin glass-epoxy substrate.

This Hynix 512Mb 1st ver. based DDR2 UnbufferedDIMM series provide a high performance 8 byte interface in 133.35mm width form factor of industry standard.

It issuitable for easy interchange and addition.

Features

JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply
All inputs and outputs are compatible with SSTL_1.8 interface
4 Bank architecture
Posted CAS
Programmable CAS Latency 3 , 4 , 5
OCD (Off-Chip Driver Impedance Adjustment)
ODT (On-Die Termination)
Fully differential clock operations (CK & CK)
Programmable Burst Length 4 / 8 with both sequential and interleave mode
Auto refresh and self refresh supported
8192 refresh cycles / 64ms
Serial presence detect with EEPROM
DDR2 SDRAM Package: 60ball FBGA(64Mx8), 84ball FBGA(32Mx16)
133.35 x 30.00 mm form factor
Lead-free Products are RoHS compliant