SO DIMM 1GB | HMT112S6BFR6C

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Technical Data Sheet

Part Number	Rev.	Updated Date	Remark
HMT112S6BFR6C	1.0	2010-07-14

Serial Presence Detect

Part Number	Rev.	Updated Date	Remark
HMT112S6BFR6C_SPD	0.4	2010-03-29

Device Operation

File Name	Updated Date	Remark
DDR3_device_operation_timing_diagram.pdf	2010-03-05

Description

This Hynix unbuffered Small Outline Dual In-Line Memory Module (SODIMM) series consists of 1Gb B version. DDR3 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 204 pin glass-epoxy substrate. This DDR3 Unbuffered SODIMM series based on 1Gb A version provide a high performance 8 byte interface in 67.60mm width form factor of industry standard. It is suitable for easy interchange and addition.

Features

• VDD=VDDQ=1.5V
• VDDSPD=3.0V to 3.6V
• Fully differential clock inputs (CK, /CK) operation
• Differential Data Strobe (DQS, /DQS)
• On chip DLL align DQ, DQS and /DQS transition with CK transition
• DM masks write data-in at the both rising and fallingedges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, and (11)supported
• Programmable additive latency 0, CL-1 and CL-2 supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• BL switch on the fly
• 8 banks
• 8K refresh cycles /64ms
• DDR3 SDRAM Package: JEDEC standard 82ball FBGA(x4/x8), 100ball FBGA(x16) with support balls
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• Auto Self Refresh supported
• 8 bit pre-fetch

• This product is in compliance with the directive pertaining of RoHS.

Ordering Information