Hynix

Hynix (Relevance:52%)

While all addresses and control inputs are latched on the rising edges of the CK (The Mobile DDR operates from a differential clock : the crossing of CK going HIGH and CK going LOW is referred to as the positive edge of CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it (Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK). All input and output voltage levels are ...
Hynix (Relevance:38%)

... x16. The HYNIX HY5MS7B6BLFP series uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data per clock cycle at the I/O pins. The Hynix HY5MS7B6BLFP Series offers ...
Hynix (Relevance:05%)

NAND Flash DDR3 SDRAM :[Com.][Mod.] DDR2 SDRAM :[Com.][Mod.] DDR SDRAM :[Com.][Mod.] DDR2 SDRAM | DDR SDRAM | SDR SDRAM : [Com.] [Mod.] GDDR SDRAM | DDR2 SDRAM | DDR3 SDRAM | GDDR3 SDRAM | GDDR4 SDRAM | GDDR5 SDRAM Mobile SDR | Mobile DDR | PSRAM | Super Low Power SRAM | Low Power Slow SRAM Small Block | Large Block Technical Data Sheet Part Number Rev. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,Data strobes and Write ...