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1. HY5PS124(8,16)21B(L)FP(Rev0.7).fm (Relevance:23%)

   The input signal minimum slew rate is to be maintained over the range from VREF to VIH(ac) min for rising edges and the range from VREF to VIL(ac) max for falling edges as shown in the below figure. VID is the magnitude of the difference between the input voltage on CK and the input voltage on CK, or between DQS and DQS for differential strobe. Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of Vih(dc) min and the first crossing of ...

2. Hynix (Relevance:05%)

   While all address and control inputs are latched on the rising edges of the CK (Mobile DDR SDRAM operates from a differential clock: the crossing of CK going HIGH and CK going LOW is referred to as the positive edge of CK), data, data strobe and data mask inputs are sampled on both rising and falling edges of it (Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK). Read and write accesses to the Low Power DDR ...

3. Hynix (Relevance:00%)

   Read and write accesses to the Hynix Mobile SDRAMs are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. The address bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access. During burst Read or Write operation, a different bank is activated and burst Read or Writefor that bank is performed - During auto precharge burst Read or ...