 Hynix Future Memory Technology |
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 Introduction |
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 To address the challenges facing non-volatile memory technologies such as NAND, Hynix is developing a number of next generation products such as PRAM, ZRAM, SST-RAM and Re-RAM. The first goal is to produce Phase-change Random Access Memory (PRAM) by 2010. PRAM is expected to replace high-density flash memories in the next decade. Hynix also has long term partnership with Ovonyx, the inventor of phase-change memory technology, to develop next generation PRAM products. PRAMs use unique materials called chalcogenides whose state can change from crystalline to amorphous with current. These states represent a logical ¡®1¡¯ or ¡®0¡¯.
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| Hynix Future Memory Roadmap |
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| PRAM Performance |
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| PRAM is valued for its fast processing speeds combined with the ability to retain data even when power is shut off, similar to flash memory. PRAM can rewrite data 30 times faster than conventional flash memory and is expected to have at least 10 times the life span. |
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| Future Memory Market Position |
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| PRAM and ReRAM can offer much higher performance in applications where write speeds and high density are important. Writes into the memory array may be conducted without the need to erase an entire block of cells.
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For more information on the product, please contact us. 