| Sep. 2009 |
| The 9th Edition |
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 Unveiling Industry's first 1Gb DDR3 Low Power |
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 Introduction |
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Hynix has developed a new 1Gb DDR3, using innovative design modifications, for production on its existing 54nm technology. This new product features significantly improved speed-power characteristics and is scheduled for mass production by end of 2009.
Hynix's new 1Gb DDR3, offered in x4 (H5TQ1G43TFR) and x8 (H5TQ1G83TFR) organizations, has some innovative design modifications that significantly improve the speed-power characteristics of the device. The product is slated for mass production towards the end of this year.
By introducing this second generation 1Gb DDR3, Hynix is responding to the industry demand for eco-friendly or 'green' products that reduce power consumption and utility expenditures, improve reliability and reduce carbon emissions. Highly virtualized applications such as data centers, servers and supercomputers, could take advantage of the low power features of this product to enable cooler, power efficient systems. This product would also be ideal in mobile applications, such as Notebooks, where it markedly extends battery life.
The new Hynix 1.5V 1Gb DDR3 features 25% lower power consumption than legacy or competing solutions. The 1.35V (DDR3L) version of the product will yield an additional 20% power savings. It will be an attractive solution for applications requiring compliance to energy star specifications. Hynix plans to start sampling this device for customer qualifications immediately.
The new design philosophy adopted on the second generation 1Gb DDR3, will also be applied to future high density DRAM components from Hynix.
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| Product Specification |
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Details |
| Voltage |
1.5V / 1.35V |
| Package type |
FBGA |
| Package size |
7.5 x 11 (mm) |
| Organization |
x4 / x8 |
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| Production Schedule |
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| Status |
Schedule |
| ES (Engineering Sample) |
Sep' 09 |
| CS (Customer Sample) |
Oct' 09 |
| MP (Mass Production) |
Dec' 09 |
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For more information on the product, please contact us. 