| Dec. 2009 |
| The 12th Edition |
|
 |
 4Gb DRAM Only PoP (Package-On-Package) |
|
|
|
|
|
 Key Features |
 |
| Density |
DRAM (2Gb 54nm)
4Gb DDR (2-die stack with 2CS) |
Package Size |
12.0¡¿12.0mm2 |
| Operating Voltage |
VDD,VDDQ -> 1.7V ~ 1.96V |
Package Thickness |
0.8mm |
| Operation Temperature |
-30~85¡É |
Ball Pitch |
0.5mm |
|
 |
|
| Introduction of 4Gb Dram Only PoP using 54nm Mobile DRAM |
|
Hynix is offering a high density, 4Gb Mobile DDR SDRAM, in a small form factor PoP (Package On Package) for emerging mobile applications. This is twice the memory capacity of the 2Gb, the current highest density mobile DRAM.
It boasts maximum operating speed of 400Mbps (Megabits per second), processing up to 1.6GB (Gigabytes) of data per second with a 32-bit I/O.
The product complies with the JEDEC standards, and is well suited for Next generation mobile applications such as MID, NetBooks and High-end smart-phones requiring high density, high speed downloads, graphics and video processing and low power consumption for extended battery life.
This world¡¯s first 4Gb Mobile DRAM was validated on Intel¡¯s ¡®Moorestown¡¯ platform for MID (Mobile Internet Device) applications last August.
Mass production has already started as of the fourth quarter of 2009, to meet the increasing demand for high density and high performance memory in mobile applications.
|
|
|
|
 |
|
 |
|
For more information on the product, please contact us.