| January 2010 |
| The First Edition |
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 World's first 2Gb LPDDR2 Mobile SDRAM |
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 Product Features |
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| Density |
2Gb DDR2 (x32 I/O) |
| Operating speed |
up to 1,066Mbps |
| Operating Core Voltage |
1.2V |
| Memory Solution |
BGA / MCP / PoP |
| Processed data per second |
up to 8.52GB in case of Dual channel |
| Application Devices |
Smartphone, Smartbook, UMPC |
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| Hynix Semiconductor develops World's first 2Gb LPDDR2 Mobile SDRAM |
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Hynix Semiconductor announced that it has developed the world's first 2Gb(Gigabit) Low Power DDR2 SDRAM for mobile applications using the company's leading edge 40nm class process technology.
This product operates at 1,066 Mbps (Megabits per second), which is the fastest speed among currently available mobile DRAM solutions and provides designers with high density mobile memory in small form factor MCP (Multi Chip Package) or PoP (Package on Package) types. The device operates at a low core voltage of 1.2V and processes up to 4.26GB(Gigabytes) of data per second with a 32-bit I/O, providing high bandwidth. It consumes approximately 50% less power than existing mobile memory solutions.
The product meets JEDEC standards and is designed for use in next generation Smartphone, Smartbook and Tablet PC applications, which require high density and high bandwidth memory solutions.
Hynix plans to start volume production of this product in the first half of this year to meet increasing demand on high density mobile DRAMs for high performance mobile applications.
Since its first introduction of 2Gb mobile DDR using 50nm class process technology in 2008, also a world's first, Hynix has been positioning itself as a technology leader in Mobile DRAMs and a major supplier for a wide range of mobile applications.
Hynix plans to maintain its competitiveness with a diversified product line-up and capitalize on its technology leadership in the future.
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For more information on the product, please contact us.