| January 2010 |
| The First Edition |
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 Release of Customer Samples of 32nm 32Gb MLC NAND Flash |
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 Product Introduction |
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Hynix Semiconductor has introduced the 32Gb (Gigabits) MLC (Multi Level Cell) NAND Flash based on 32nm (nanometer) process technology, and is now validating the products at major chipset makers and end-use customers.
This high density NAND Flash is available in industry standard TSOP and also the new Landed Grid Array (LGA) package, enabling a diverse range of system applications and form factors. Hynix's proprietary stacking technology can support 8-high stacks or 256Gb capacity suitable for applications such as MP3 players, Personal Media Players (PMP), UFD (USB Flash Drive), external flash cards, embedded memory for Smart Phones and navigation devices, and eMMC (Embedded Multi Media Card).
Hynix's industry leading process technology has enabled high density, cost effective monolithic MLC NAND Flash components. Hynix plans to expand on the derivative products such as SLC (Single Level Cell) NAND Flash and TLC (Triple Level Cell) products by applying this new advanced process technology node.
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| Product Key Features |
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| Product |
32nm based 32Gb NAND Flash |
| Cell Type |
MLC (Multi Level Cell) |
| Density |
4GB/8GB/16GB/32GB |
| Operating Voltage |
2.7V ~ 3.6V |
| Organization |
x8 |
| Page Buffer Size |
8K bytes |
| Operation Temperature |
0¡É ~ 70¡É / -40¡É ~ 85¡É |
| Package Dimension |
TSOP (12x20x1.2mm)
LGA (14x18x1.0mm) |
| Functionality |
Cache Program/Erase, Multi Plane Operation |
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| Product lineup |
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| 4GB , 8GB and 16GB MLC |
1Q'10 (Customer sample) / 2Q¡®10 (Mass production) |
| 32GB MLC |
2Q'10 (Customer sample) / 3Q¡®10 (Mass production) |
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For more information on the product, please contact us.