April 2010 The 4th Edition  Hynix plans to release 2GB uSD based on triple level cell    Product Information Hynix has completed development of TLC (Triple Level Cell)- NAND Flash based 2GB uSD Card, and plans to complete qualifications at major customers in the second quarter. The TLC NAND Flash is built using 41nm process node. TLC increases NAND Flash density by storing 3-bit information per memory cell, compared to SLC (Single Level Cell) that stores 1-bit per cell and MLC (Multi Level Cell) that stores 2-bit per cell. TLC also helps in lowering cost per bit. Hynix has the leading technology in TLC market with the history of launching 48nm TLC NAND Flash in early 2009. The newly developed 41nm TLC-based uSD Card is compliant to SD Class2* specifications and is capable 1 thousand read/write cycles, meeting the needs of a diverse range of applications. This TLC based 2GB uSD Card is the first product built using this new technology. The 2GB density commands a market share of 40% in 2010. Hynix expects to capture a significant share of uSD market with this cost effective solution. Hynix plans to offer 30nm class TLC based 16GB and higher density uSD products in the future. * Class2 : Standard of SD Card performance  Key Features Density : 2GB Speed class: Class2 Performance (Sequential) : 2.5MB/s (Write), 15MB/s (Read) Interface : SD 2.0 Technology : 41nm Cell type : TLC (Triple Level Cell) Stack : Single Die Package  Product Image     Should you have any queries or wish to send your feedback on our newsletter, please email us at hynix_newsletter@hynix.com We always appreciate hearing from you.