May 2010
The Fifth Edition
 Introduction of 44nm 1Gb DDR3 (x8/x16)  
 Product Information & Introduction
Hynix Semiconductor has completed development of 44nm 1Gb DDR3 to meet all the needs of Main Memory/Graphics/Consumer markets and is planning to release customer samples in June.

This product offers less power consumption and higher performance, compared with the earlier generation of 54nm 1Gb T-version. Stand-by current is reduced by 20% and operating current by 30%. It also boasts high performance of up to 2133Mbps, providing the user with extended battery life in mobile applications and higher performance.

The new 44nm 1Gb DDR3 (x16 organization) provides high speed performance of up to 1.1GHz required for graphics applications. Furthermore, the product meets the intermediate frequency of 900MHz required in some applications.

For consumer digital TV market, this product supports DDR3 Plus specifications, which increases memory efficiency of the DRAM when interfacing with the CPU or application processor. DDR3 Plus finds wide use in IPTV (Internet Protocol Television), Digital Television and HDTV(High Definition Television), Digital Set top box, and other consumer electronics applications.
 Power Consumption & Speed
 Key Features
Item 44nm 1Gb DDR3
I/O X8 x16
Speed up to 2133Mbps up to 1.1GHz
VDD(Q) 1.5V(1. 5V) , 1.35V Supportable
Banks / Prefetch 8 Banks / 8 bit
Refresh 8K / 64ms
Interface SSTL_15
Performance
Improvement
* tCCD=2CK, **BL=4 Supported
Package FBGA 78ball
(7.5mmx11.0mm)
FBGA 96ball
(9.0mmx13.0mm)
 

* tCCD (CAS to CAS command Delay)

 

** BL (Burst Length)

 
 
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