Release of 44nm 512Mb DDR2 Customer Samples
Product Information
Hynix Semiconductor has been developed of 44nm 512Mb DDR2 to meet the needs of consumer applications and is planning to release customer samples in September.

This product is complied with JEDEC standards and designed for use in Digital TV, Set top box, Hard Disk Drive, Network switching and Router applications requiring high data transfer rates and low power consumption.

The 44nm 512Mb DDR2 has superior power and performance characteristics, compared to the previous generation manufactured on 66nm.This new product lowers standby current by 32% and active current by 55%. It also boosts speed from 400MHz to 600MHz,and can be offering 2 types of products, i.e. 64x8 or 32x16.

Hynix plans to maintain its cost competitiveness and industry leadership with a diversified product line-up and leading-edge technology in consumer application area.
Power Consumption Comparison


Key Features
Items 66nm 512M DDR2 SDRAM
(F-Version)		 44nm 512M DDR2 SDRAM
(G-Version)
Bit Organization 32M bit x 16 I/O x 4 Bank 64M bit x 8 I/O x 4 Bank
32M bit x 16 I/O x 4 Bank
Frequency 400MHz / 500MHz / 600MHz
Power Supply 400MHz / 500MHz at VDD(Q) = 1.8V
500MHz~600MHz at VDD(Q) = 2.0V		 400MHz~600MHz at VDD(Q) = 1.8V
Package 84 FBGA 60 FBGA for x 8
84 FBGA for x 16
Function Refresh : 8192 cycles / 64ms
Active Current(IDD4R)

100%

55% Down
Standby
Current(IDD2N&3N)

100%

32% Down